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Important milestone in the field of graphene chip manufacturing →

Date:2024-01-06

Yesterday, January 4, science and technology daily learned from the Tianjin University that, professor Mary's team, from the university's Centre for international research on nanoparticles and nanosystems, has overcome a key technical challenge that has long held back the development of graphene electronics, while ensuring that it has excellent properties, the opening of the graphene bandgap has become an important milestone in the field of graphene chip manufacturing. The results of this research paper, “Ultrahigh mobility semiconductor epitaxial graphene grown on silicon carbide,” published online January 3 in the international journal Nature.

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Picture: Tianjin University

By precisely regulating the growth of epitaxial graphene, Marley's team succeeded in introducing a band gap into graphene, creating a new, stable semiconductor graphene. The semiconductor graphene Electron mobility far more than silicon, exhibits 10 times the properties of silicon, and has unique properties that silicon does not.

 

According to our understanding, this research uses an innovative quasi-equilibrium annealing method to prepare super-large single-layer single-domain semiconductor epitaxial graphene (SEG) with large growth area and high uniformity, simple process flow, low cost and other advantages. The semiconductor graphene prepared by the method has a band gap of about 600 millielectron volts and a room temperature hall mobility of up to 5,500 cm square per volt tersecond, which is at least an order of magnitude better than all two-dimensional crystals currently available. The field-effect transistor (FET) has a high switching ratio of 10000, which basically meets the needs of industrial applications.


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